SiC presents 10x the dielectric breakdown electric powered field energy of silicon, which makes it feasible to obtain increased breakdown voltages by way of reduce resistivity as well as a thinner drift layer. This allows a decreased normalized ON resistance (ON resistance for each unit spot) at precisely the same https://igbtpowermodule80122.dreamyblogs.com/21817931/the-definitive-guide-to-silicon-carbide-diodes